论文信息 - Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon - 字舞流文

Effect of annealing at argon pressure up to 1.2 GPa on hydrogen-plasma-etched and hydrogen-implanted single-crystalline silicon

A. Romano-Rodríguez | V. Popov | I. Antonova | J. Jun | C. A. Londos | A. Misiuk | A. Barcz | J. Bk-Misiuk | V. Popov