Future Prospects of Widebandgap (WBG) Semiconductor Power Switching Devices

Electrical power switching devices based on widebandgap (WBG) semiconductors have the potential for transformative impact on a wide range of energy conversion applications. Significantly improved electrical and thermal conductivities of WBG semiconductors compared with the semiconductor silicon have the potential for more efficient, compact, and robust power conversion systems. However, to offset inherently higher manufacturing cost of WBG power devices and obtain system-level benefits, power converters need to be operated at higher semiconductor chip junction temperatures and/or at higher switching frequencies. This paper discusses the future prospects of WBG-based power electronics by considering the current state of the art of WBG chip manufacturing, packaging, and thermal management technologies.

[1]  Krishna Shenai,et al.  Optimization of High-Voltage Wide Bandgap Semiconductor Power Diodes , 2015, IEEE Transactions on Electron Devices.

[2]  K. Shenai,et al.  Simple and Accurate Circuit Simulation Model for Gallium Nitride Power Transistors , 2012, IEEE Transactions on Electron Devices.

[3]  Masanori Nagaya,et al.  Influence of Threading Dislocations on Lifetime of Gate Thermal Oxide , 2012 .

[4]  J. Suehle,et al.  Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments , 2010, IEEE Transactions on Device and Materials Reliability.

[5]  J. Suehle,et al.  Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements , 2008, IEEE Transactions on Electron Devices.

[6]  Sei-Hyung Ryu,et al.  A New Degradation Mechanism in High-Voltage SiC Power MOSFETs , 2007, IEEE Electron Device Letters.

[7]  H. Bleichner,et al.  High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects , 2002 .

[8]  Mitiko Miura-Mattausch,et al.  Physically-based threshold voltage determination for MOSFET's of all gate lengths , 1999 .

[9]  M. Trivedi,et al.  Impact of dynamic avalanching of reverse conducting diode in an IGBT module on optimum power converter design , 1998, Conference Record of 1998 IEEE Industry Applications Conference. Thirty-Third IAS Annual Meeting (Cat. No.98CH36242).

[10]  Krishna Shenai,et al.  Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications , 1990 .

[11]  Krishna Shenai,et al.  Optimum semiconductors for high-power electronics , 1989 .

[12]  K. E. Benson,et al.  The Science and Engineering of Large- Diameter Czochralski Silicon Crystal Growth , 1987 .

[13]  V. Tsvetkov,et al.  Investigation of growth processes of ingots of silicon carbide single crystals , 1978 .

[14]  A. G. Chynoweth,et al.  Photon Emission from Avalanche Breakdown in Silicon , 1956 .

[15]  R. Newman,et al.  Visible Light from a Silicon p − n Junction , 1955 .

[16]  Luca Weisz,et al.  Power Electronics Converters Applications And Design , 2016 .

[17]  Krishna Shenai,et al.  Rugged Electrical Power Switching in Semiconductors: A Systems Approach , 2014, Proceedings of the IEEE.

[18]  Malik Elbuluk,et al.  Fundamentals of Power Electronics , 2013 .

[19]  D. Schroder.  Series Resistance, Channel Length and Width, and Threshold Voltage , 2006 .

[20]  P. D. Taylor,et al.  Modern Power Devices , 1988 .

[21]  J. H. Poynting.  XV. On the transfer of energy in the electromagnetic field , 1884, Philosophical Transactions of the Royal Society of London.

[22]  John Henry Poynting,et al.  On the transfer of energy in the electromagnetic field , 1883, Proceedings of the Royal Society of London.