Defect states in Ge chalcogenides observed by photoluminescence and ESR
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[1] Tatsuo Shimizu,et al. ESR study of amorphous Ge-S and Ge-S-Ag in bulk and film forms , 1978 .
[2] M. Koós,et al. Photoluminescence of glassy and single-crystalline GeSe2 measured at 77K , 1977 .
[3] Y. Inuishi,et al. Photoluminescence and Optical Properties of Ge1-xSex Glasses , 1977 .
[4] D. Adler,et al. Valence-Alternation Model for Localized Gap States in Lone-Pair Semiconductors , 1976 .
[5] R. Street. Luminescence in amorphous semiconductors , 1976 .
[6] R. Street,et al. States in the Gap in Glassy Semiconductors , 1975 .
[7] R. Street,et al. States in the gap and recombination in amorphous semiconductors , 1975 .
[8] Philip W. Anderson,et al. Model for the Electronic Structure of Amorphous Semiconductors , 1975 .
[9] F. Mollot,et al. Study of localized states in amorphous semiconductor chalcogenides by radiative recombination , 1974 .
[10] H. Namikawa,et al. ESR in GeS glasses , 1973 .
[11] G. Lucovsky,et al. First evidence for vibrational excitations of large atomic clusters in amorphous semiconductors , 1977 .
[12] John L. Moll,et al. Physics of Semiconductors , 1964 .