High efficiency switch-mode power amplifier

Switch-mode power amplifier comprises a transistor responsive to an input signal exceeding 1.0 GHz, and the transistor comprises an other terminal coupled to the conductive terminal and a power source coupled to ground. Resonant circuit is coupled to the second terminal to the output, and is a resistive load coupled between the output and ground. When the transistor is turned on and the second terminal is coupled to ground, when the transistor is turned off, the current flowing to the second terminal from the power source flows into the capacitance of the transistor, the maximum voltage of the second terminal It decreases then increases up to a value, the voltage of the second terminal is coupled to the output terminal through the resonant circuit. In a preferred embodiment, the transistor has a first terminal to which the source terminal and the second terminal is a drain terminal of the compound semiconductor field effect transistor. Preferably, the field effect transistor is a compound that although the electron mobility transistor (HEMT) or compound volumetric pipette (MESFET), in other embodiments, the transistors are compounds eldi MOS (LDMOS), compound bipolar transistor or a compound MOSFET (MOSFET ) it may be.