High-Frequency SiC Three-Phase VSIs With Common-Mode Voltage Reduction and Improved Performance Using Novel Tri-State PWM Method

Common-mode voltage (CMV) problem brings severe negative effects in three-phase voltage source inverters (VSIs), particularly for high-frequency silicon (Si) carbide (SiC) VSIs. However, most traditional CMV reduction strategies, which are studied based on Si VSIs, are hard to be implemented and sacrifice the other performance of the VSIs. To overcome such drawbacks, this paper proposes a novel generalized tri-state pulsewidth modulation (GTSPWM) for high-frequency SiC VSIs over power factor of 0–1 and whole linear modulation index range. The working principle of conventional space vector based reduced CMV PWM (RCMV-PWM) methods are reviewed, and their switching signals and CMV patterns are illustrated. The proposed GTSPWM method is described in a generalized scalar PWM approach for simple application and compared with other RCMV-PWM methods. Mathematical analysis, simulations, and experimental results have been used to verify that GTSPWM based high-frequency SiC VSIs can achieve minimum switching losses, improved output waveform quality, smaller dc-link current ripples, and RCMV characteristics. Moreover, with the usage of GTSPWM method, the switching frequency of SiC VSIs can be further increased, and the performance of high-frequency SiC VSIs could be improved appreciably.