A method for the direct measurement of the solar cell junction ideality factor

Abstract A method, which can measure the junction ideality factor n directly from the illuminated output J-V curve, is described. The following cases are treated separately: infinite shunt resistance and zero series resistance; finite shunt resistance or finite series resistance; finite shunt resistance and finite series resistance. The method is used to measure the junction ideality factor of metal/insulator n-p, metal/insulator/semiconductor and n+-p silicon solar cells which are fabricated in our laboratory. The n values are in the range 1.25–1.89.

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