Design considerations and impact of technological parametric variations on RF/microwave performance of GEWE-RC MOSFET

This letter investigates design considerations and impact of technological parametric variations on microwave performance of gate electrode workfunction engineered recessed channel (GEWE-RC) MOSFET using ATLAS.Results reveal significantly enhanced microwave performance of GEWE-RC over bulk in terms of intrinsic delay, gains, cut-off frequency, S-parameters proving its effectiveness in radio-frequency-wireless, and RFID technology. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 652–657, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25008

[1]  Hongxia Ren,et al.  The influence of geometric structure on the hot-carrier-effect immunity for deep-sub-micron grooved gate PMOSFET , 2002 .

[2]  Denis Flandre,et al.  Influence of device engineering on the analog and RF performances of SOI MOSFETs , 2003 .

[3]  Jason C. S. Woo,et al.  Nanoscale MOSFET with Split-Gate Design for RF/Analog Application , 2004 .

[4]  Behzad Razavi.  CMOS technology characterization for analog and RF design , 1999 .

[5]  Ryuichi Fujimoto,et al.  0.15-/spl mu/m RF CMOS technology compatible with logic CMOS for low-voltage operation , 1998 .

[6]  R. S. Gupta,et al.  Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET for ULSI , 2008 .

[7]  M. Saxena,et al.  GEWE-RC MOSFET: High performance RF solution to CMOS technology , 2008, 2008 Asia-Pacific Microwave Conference.

[8]  Lawrence E. Larson,et al.  Silicon technology tradeoffs for radio-frequency/mixed-signal (quote)systems-on-a-chip(quote) , 2003 .

[9]  Calvin Plett,et al.  Radio Frequency Integrated Circuit Design , 2003 .

[10]  R. Waterhouse,et al.  Design of wide-band aperture-stacked patch microstrip antennas , 1998 .

[11]  Mark S. Lundstrom,et al.  Performance analysis and design optimization of near ballistic carbon nanotube field-effect transistors , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[12]  F. Schwierz,et al.  RF Transistors: Performance Trends Versus ITRS Targets , 2006, 2006 International Caribbean Conference on Devices, Circuits and Systems.

[13]  T. Manku,et al.  Impact of technology scaling on CMOS RF devices and circuits , 2000, Proceedings of the IEEE 2000 Custom Integrated Circuits Conference (Cat. No.00CH37044).

[14]  Xing Zhou,et al.  Exploring the novel characteristics of hetero-material gate field-effect transistors (HMGFETs) with gate-material engineering , 2000 .

[15]  Subhasis Haldar,et al.  Substrate‐effect‐dependent scattering parameter extraction of short‐gate‐length IGFET for microwave frequency applications , 2000 .

[16]  M. Saxena,et al.  TCAD Assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and Its Multilayered Gate Architecture—Part I: Hot-Carrier-Reliability Evaluation , 2008, IEEE Transactions on Electron Devices.

[17]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[18]  J. Burghartz.  Silicon RF Technology - The Two Generic Approaches , 1997, 27th European Solid-State Device Research Conference.