论文信息 - Effects of X-ray and γ-ray Irradiation on GaN

Effects of X-ray and γ-ray Irradiation on GaN

As part of the feasibility study of using III-V nitride semiconductors for x-ray and γ-ray detection, the irradiation effects on GaN were investigated. GaN films with very different electrical resistivity and electron concentration were used in the study. The electron mobility, photoconductivity spectra, and photo-luminescence spectra were measured before and after irradiation. An enhanced ημτ product for undoped GaN films and an enhanced blue luminescence for a Zn-doped sample were observed after irradiation.

[1] J. Pankove,et al. Study of defect states in GaN films by photoconductivity measurement , 1995 .

[2] T. Schlesinger,et al. Semiconductors for room temperature nuclear detector applications , 1995 .

[3] Fernando Ponce,et al. High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .

[4] J. J. Tietjen,et al. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN , 1969 .

[5] Takahiro Kozawa,et al. Electron beam effects on blue luminescence of zinc-doped GaN , 1988 .

[6] S. Denbaars,et al. Photocurrent decay in n‐type GaN thin films , 1996 .