论文信息 - Ion beam milling of InP with an Ar/O2‐gas mixture

Ion beam milling of InP with an Ar/O2‐gas mixture

Ion beam etching has been successfully applied to InP using an Ar/O2‐gas mixture. Varying angles of beam incidence resulted in different shapes of the etched profiles with the achievement even of undercutting. Good selectivity with respect to Novolak‐type photoresists prevails at higher accelerating voltages.

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