论文信息 - Influence of stress on light‐induced effects in amorphous silicon alloys - 字舞流文

Influence of stress on light‐induced effects in amorphous silicon alloys

We have studied the effect of stress on light‐induced changes in photoconductivity and solar cell performance of amorphous silicon alloys. We find no correlation between degradation and stress in the material.

W. Boer | S. Guha | S. Agarwal | M. Hack

[1] M. Stutzmann. Role of mechanical stress in the light‐induced degradation of hydrogenated amorphous silicon , 1985 .

[2] M. Shur,et al. Photoconductivity and recombination in amorphous silicon alloys , 1984 .

[3] S. Guha. Failure of reciprocity in light‐induced changes in hydrogenated amorphous silicon alloys , 1984 .

[4] D. Lang,et al. Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon films , 1984 .

[5] D. Staebler,et al. Properties of the defect causing solar cell degradation , 1983 .

[6] S. Hudgens,et al. On the mechanism of light‐induced effects in hydrogenated amorphous silicon alloys , 1983 .

[7] C. Wilmsen,et al. Estimation of the band gap of InPO4 , 1983 .

[8] D. Adler. DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON , 1981 .

[9] D. Staebler,et al. Reversible conductivity changes in discharge‐produced amorphous Si , 1977 .