Suppression of temperature sensitivity of interband emission energy in 1.3-μm-region by an InGaAs overgrowth on self-assembled InGaAs/GaAs quantum dots

We found that the temperature sensitivity of interband emission energy was suppressed significantly in 1.3-μm-emitting self-assembled InGaAs/GaAs quantum dots by an InGaAs overgrowth on the dots. Transmission electron microscopy measurements indicated that lattice distortion was enhanced on dots in a 10-nm-thick InxGa1−xAs overgrowth layer. Photoluminescence spectra showed that the emission energy shift with increasing temperature was nearly negligible above 150 K when x⩾0.25. The shift between 4.2 and 200 K was less than half that of bulk GaAs when x=0.3. The results reveal the potential of InGaAs-covered dots in realizing temperature-insensitive lasing wavelength of laser diodes by manipulating the three-dimensional strain distribution.