论文信息 - Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM) - 字舞流文

Physics in Charge Injection Induced On-Off Switching Mechanism of Oxide-Based Resistive Random Access Memory (ReRAM) and Superlattice GeTe/Sb2Te3 Phase Change Memory (PCM)

Y. Nishi | K. Shiraishi | S. Kato | M. Yang | K. Kamiya | M. Araidai | N. Takaura | M. Niwa | Takahiro Yamamoto | T. Ohyanagi | B. Kope