论文信息 - The High Injection MOS cell: a novel 5V-only Flash EEPROM concept with a 1 μs programming time

The High Injection MOS cell: a novel 5V-only Flash EEPROM concept with a 1 μs programming time

This novel Flash EEPROM device combines a high programming speed of the order of 1 μs at 5V-only operation with a low development entry cost, which renders it a highly attractive concept for fast nonvolatile ASIC applications.

G. Groeseneken | L. Deferm | D. Wellekens | J. Van Houdt | H.E. Maes

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