论文信息 - RESURF AlGaN/GaN HEMT for high voltage power switching

RESURF AlGaN/GaN HEMT for high voltage power switching

A novel HEMT configuration based on the RESURF technique is proposed for very high voltage power switching applications. It employs a p-n junction below the 2-DEG channel and two field plates, one extending from the gate and the other from the drain, to distribute the electric field over the gate to drain separation. 2-D simulations indicate a breakdown voltage >1 KV at on-resistance of /spl sim/1 m/spl Omega//spl middot/cm/sup 2/ (neglecting contact resistances) for the device.

S. Karmalkar | M. Shur | S. Karmalkar | M.S. Shur | Jianyu Deng

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