Locally-separated vertical channel SONOS flash memory (LSVC SONOS) for multi-storage and multi-level operation

A SONOS flash memory having locally-separated vertical channels is investigated. The vertical SONOS flash memory has a scaling issue related with the fin width. As the fin width is shorter, electrical interference between paired cells (PCI) is severer. To overcome PCI, we propose the locally-separated vertical channel SONOS (LSVC SONOS) structure. We demonstrate reliable operation of LSVC SONOS using ATLAS simulation. This device structure is promising for multi-storage and multi-level operation.

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