On the additivity of generation-recombination spectra. Part 3: The McWhorter model for 1/f noise in MOSFETs

Abstract This is a critical study on the McWhorter model, taking into account the conditions for additivity of GR spectra. A major finding is that the model does indeed give 1/f spectra. The calculated α -values agree with experimental values of MOSFETs in strong inversion. A simple comparison of experimental α -values with values calculated from a Δ μ -model or a McWhorter Δ n -model does not allow us to decide which the correct noise source is. However, the dependence of α on the gate voltage has often been used as a criterion for the correct source. Nevertheless, the V GT -dependence does not lead to unambiguous conclusions either.

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