Advancing next generation nanolithography with infiltration synthesis of hybrid nanocomposite resists

Novel positive-tone hybrid resists developed by vapor-phase inorganic infiltration feature fully tunable resist performance parameters and high-aspect-ratio pattern transfer capability.

[1]  Dominique Mailly,et al.  Sub-10 nm electron and helium ion beam lithography using a recently developed alumina resist , 2018, Microelectronic Engineering.

[2]  J. Thackeray,et al.  Silylated acid hardened resist process: A deep ultraviolet surface imaging technique , 1990 .

[3]  M. Z. R. Khan,et al.  Spin-coatable HfO2 resist for optical and electron beam lithographies , 2010 .

[4]  K. Yager,et al.  Aberration-Corrected Electron Beam Lithography at the One Nanometer Length Scale. , 2017, Nano letters.

[5]  B. Roland,et al.  Surface imaging techniques , 1991 .

[6]  Woo Jin Bae,et al.  High-index nanocomposite photoresist for 193-nm lithography , 2009, Advanced Lithography.

[7]  Paul Fenter,et al.  Mechanistic understanding of tungsten oxide in-plane nanostructure growth via sequential infiltration synthesis. , 2018, Nanoscale.

[8]  Mingxing Wang,et al.  Novel polymeric anionic photoacid generators (PAGs) and corresponding polymers for 193 nm lithography , 2006 .

[9]  Clifford L. Henderson,et al.  A top surface imaging method using area selective ALD on chemically amplified polymer photoresist films , 2006 .

[10]  Y. Ekinci,et al.  Dual-tone Application of a Tin-Oxo Cage Photoresist Under E-beam and EUV Exposure , 2018, Journal of Photopolymer Science and Technology.

[11]  G. Grenci,et al.  Boehmite filled hybrid sol-gel system as directly writable hard etching mask for pattern transfer , 2011 .

[12]  D. Czaplewski,et al.  Improved etch resistance of ZEP 520A in reactive ion etching through heat and ultraviolet light treatment , 2009 .

[13]  C. W. Hagen,et al.  Resists for sub-20-nm electron beam lithography with a focus on HSQ: state of the art , 2009, Nanotechnology.

[14]  Mathew D. Halls,et al.  Chemical Modification Mechanisms in Hybrid Hafnium Oxo-methacrylate Nanocluster Photoresists for Extreme Ultraviolet Patterning , 2018, Chemistry of Materials.

[15]  W. Huck,et al.  Fabrication of Sub‐10 nm Metallic Lines of Low Line‐Width Roughness by Hydrogen Reduction of Patterned Metal–Organic Materials , 2010 .

[16]  B. Cui,et al.  Metal-carbonyl organometallic polymers, PFpP, as resists for high-resolution positive and negative electron beam lithography. , 2015, Chemical communications.

[17]  H. Ahmed,et al.  Comparison of MIBK/IPA and water/IPA as PMMA developers for electron beam nanolithography , 2002 .

[18]  M. Hatzakis,et al.  Metal methacrylates as sensitizers for poly methyl methacrylate electron resists , 1979 .

[19]  Giovanna Brusatin,et al.  Novel Hybrid Organic–Inorganic Spin‐on Resist for Electron‐ or Photon‐Based Nanolithography with Outstanding Resistance to Dry Etching , 2013, Advanced materials.

[20]  M. Vayer,et al.  High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films , 2018, Micro and Nano Engineering.

[21]  M. Welland,et al.  Direct writing of ZrO2 on a sub-10 nm scale using an electron beam , 2003 .

[22]  Kenji Yamazaki,et al.  Electron Beam Nanolithography of β-Ketoester Modified Aluminium Tri-Sec-Butoxide , 2004 .

[23]  H. Morimoto,et al.  High sensitive negative silylation process for 193nm lithography , 2000 .

[24]  Amrit Narasimhan,et al.  Reactivity of metal-oxalate EUV resists as a function of the central metal , 2017, Advanced Lithography.

[25]  D. C. Shaver,et al.  Silylation processes for 193-nm excimer laser lithography , 1990, Advanced Lithography.

[26]  Giovanna Brusatin,et al.  New hybrid organic-inorganic sol-gel positive resist , 2010 .

[27]  Leonidas E. Ocola,et al.  Enhanced polymeric lithography resists via sequential infiltration synthesis , 2011 .

[28]  Michael A. Morris,et al.  Directed self-assembly of block copolymers for nanocircuitry fabrication , 2015 .

[29]  Guk-Jin Kim,et al.  Influence of a wrinkle in terms of critical dimension variation caused by transmission nonuniformity and a particle defect on extreme ultraviolet pellicle , 2017 .

[30]  A. Vijayaraghavan,et al.  Directed self-assembly of block copolymers for use in bit patterned media fabrication , 2013 .

[31]  E. Fabrizio,et al.  Study of nanometer resolution resist slope for the UVIII chemically amplified resist , 1999 .

[32]  David S. Germack,et al.  Chemically enhancing block copolymers for block-selective synthesis of self-assembled metal oxide nanostructures. , 2013, ACS nano.

[33]  Yasin Ekinci,et al.  Absorption coefficient of metal-containing photoresists in the extreme ultraviolet , 2018 .

[34]  E. Gogolides,et al.  Optimized surface silylation of chemically amplified epoxidized photoresists for micromachining applications , 2010 .

[35]  Arwa Saud Abbas,et al.  Water soluble and metal-containing electron beam resist poly(sodium 4-styrenesulfonate) , 2014 .

[36]  G. Schmidt,et al.  Chemical Semi-Amplified positive E-beam Resist (CSAR 62) for highest resolution , 2013, Other Conferences.

[37]  Seth B. Darling,et al.  New Insight into the Mechanism of Sequential Infiltration Synthesis from Infrared Spectroscopy , 2014 .

[38]  Li Li,et al.  Extreme ultraviolet resist materials for sub-7 nm patterning. , 2017, Chemical Society reviews.

[39]  W. Huck,et al.  Sub- 10-nm high aspect ratio patterning of ZnO in a 500 μm main field , 2006 .

[40]  Feixiang Luo,et al.  Chemical and structural investigation of high-resolution patterning with HafSO(x). , 2014, ACS applied materials & interfaces.

[41]  S. Raible,et al.  Systematic studies of functionalized calixarenes as negative tone electron beam resist , 1998 .

[42]  Collen Z. Leng,et al.  Vapor phase infiltration (VPI) for transforming polymers into organic–inorganic hybrid materials: a critical review of current progress and future challenges , 2017 .

[43]  Stephen Thoms,et al.  Electron beam lithography process for T- and Γ-shaped gate fabrication using chemically amplified DUV resists and PMMA , 1999 .

[44]  Effect of Nanostructured Domains in Self-Assembled Block Copolymer Films on Sequential Infiltration Synthesis. , 2017, Langmuir : the ACS journal of surfaces and colloids.

[45]  Markos Trikeriotis,et al.  Nanoparticle Photoresists: Ligand Exchange as a New, Sensitive EUV Patterning Mechanism , 2013 .

[46]  Li Li,et al.  Studying the Mechanism of Hybrid Nanoparticle Photoresists: Effect of Particle Size on Photopatterning , 2015 .

[47]  C. W. Hagen,et al.  10nm lines and spaces written in HSQ, using electron beam lithography , 2007 .

[48]  Subrata Ghosh,et al.  Design, development, EUVL applications and nano mechanical properties of a new HfO2 based hybrid non-chemically amplified resist , 2016 .

[49]  Ashwanth Subramanian,et al.  Three-dimensional electroactive ZnO nanomesh directly derived from hierarchically self-assembled block copolymer thin films. , 2019, Nanoscale.

[50]  Kim Kisslinger,et al.  Effects of Residual Solvent Molecules Facilitating the Infiltration Synthesis of ZnO in a Nonreactive Polymer , 2017 .

[51]  Khalil Arshak,et al.  PRIME process with Shipley SPR505A resist—simulations and experiments , 2002 .

[52]  Y. Ozaki,et al.  Elemental depth profiles and plasma etching rates of positive-tone electron beam resists after sequential infiltration synthesis of alumina , 2018 .

[53]  Richard D. Peters,et al.  Ultrathin photoresists for 193-nm lithography , 2003, SPIE Advanced Lithography.

[54]  Jing Jiang,et al.  Solubility studies of inorganic-organic hybrid nanoparticle photoresists with different surface functional groups. , 2016, Nanoscale.

[55]  S. Lee,et al.  Ultrahigh Elastic Strain Energy Storage in Metal-Oxide-Infiltrated Patterned Hybrid Polymer Nanocomposites. , 2017, Nano letters.

[56]  Omkaram Nalamasu,et al.  Application of Plasmask R resist and the DESIRE process to lithography at 248 nm , 1990 .

[57]  Nikhil Tiwale,et al.  Review of Recent Advances in Applications of Vapor-Phase Material Infiltration Based on Atomic Layer Deposition , 2018, JOM.

[58]  Xie Chang-qing,et al.  Study of process of HSQ in electron beam lithography , 2010, 2010 IEEE 5th International Conference on Nano/Micro Engineered and Molecular Systems.

[59]  Mark E. Welland,et al.  Sub-10 nm Electron Beam Nanolithography Using Spin-Coatable TiO2 Resists , 2003 .

[60]  Richard D. Schaller,et al.  Infiltrated Zinc Oxide in Poly(methyl methacrylate): An Atomic Cycle Growth Study , 2017 .

[61]  M. Welland,et al.  Sub‐10 nm High‐Aspect‐Ratio Patterning of ZnO Using an Electron Beam , 2005 .

[62]  Joan Vila-Comamala,et al.  Direct e-beam writing of dense and high aspect ratio nanostructures in thick layers of PMMA for electroplating , 2010, Nanotechnology.

[63]  G. Grenci,et al.  High resolution spin-on electron beam lithography resist with exceptional dry etching resistance , 2015 .

[64]  D H Zhang,et al.  Direct patterning of high density sub-15 nm gold dot arrays using ultrahigh contrast electron beam lithography process on positive tone resist. , 2013, Nanotechnology.

[65]  Meng Zhao,et al.  Alternatives to chemical amplification for 193nm lithography , 2010, Advanced Lithography.

[66]  Roger Fabian W. Pease,et al.  Lithography and Other Patterning Techniques for Future Electronics , 2008, Proceedings of the IEEE.

[67]  Chunsheng Yang,et al.  Deep reactive ion etching of commercial PMMA in O2/CHF3, and O2/Ar-based discharges , 2004 .

[68]  Seth B Darling,et al.  Enhanced Lithographic Imaging Layer Meets Semiconductor Manufacturing Specification a Decade Early , 2012, Advanced materials.

[69]  T. Mourier,et al.  PRIME process for deep UV and e-beam lithography , 1990 .

[70]  Gary H. Bernstein,et al.  Low temperature development of PMMA for sub-10-nm electron beam lithography , 2003, 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003..

[71]  Yasin Ekinci,et al.  Platinum and palladium oxalates: positive-tone extreme ultraviolet resists , 2015 .

[72]  C. Nam,et al.  Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel‐Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis , 2017 .

[73]  Vijay Janyani,et al.  Hydrogen silsesquioxane (HSQ): a perfect negative tone resist for developing nanostructure patterns on a silicon platform , 2011, MOEMS-MEMS.

[74]  Jae Hwan Sim,et al.  Organosilicate polymer e‐beam resists with high resolution, sensitivity and stability , 2013 .

[75]  S. Yoshimori,et al.  New Positive EB Resist with Strong Resistance to Plasma Damage , 1992 .

[76]  Man-Hyoung Ryoo,et al.  Imaging results for resist films exposed to EUV radiation , 2002 .

[77]  Banqiu Wu,et al.  High aspect ratio silicon etch: A review , 2010 .

[78]  S. Kaya,et al.  Combination photo and electron beam lithography with polymethyl methacrylate (PMMA) resist , 2017, Nanotechnology.

[79]  James W. Thackeray,et al.  Approaches to deep ultraviolet photolithography utilizing acid hardened resin photoresist systems , 1989 .

[80]  Amrit Narasimhan,et al.  Antimony photoresists for EUV lithography: mechanistic studies , 2017, Advanced Lithography.

[81]  Giovanna Brusatin,et al.  Negative hybrid sol-gel resist as hard etching mask for pattern transfer with dry etching , 2012 .