论文信息 - Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length - 字舞流文

Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length

D. Ruzmetov | K. Kingkeo | M. Neupane | T. Ivanov | A. G. Birdwell | P. Shah | J. Weil | Kevin G. Crawford