论文信息 - Amorphous Silicon-Germanium Deposited by Photo-CVD: Effect of Hydrogen Dilution and Substrate Temperature

Amorphous Silicon-Germanium Deposited by Photo-CVD: Effect of Hydrogen Dilution and Substrate Temperature

The effects of substrate temperature and hydrogen dilution on mobilitylifetime product and hydrogen bonding are reported for amorphous silicongermanium films with bandgaps from 1.1 to 1.74 eV deposited by Hg-sensitized photo-CVD. The ratio of dihydride to monohydride bonding and preferential H attachment to silicon both decreased with hydrogen dilution. The best films were deposited with hydrogen dilution at substrate temperatures between 230 and 250 ° C. Model equations used to calculate radical fluxes to the substrate are described.

S. Hegedus | D. Albright | Richard Rocheleau | R. M. Tullman

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