5-Gb/s performance of integrated light source consisting of lambda /4-shifted DFB laser and EA modulator with SI InP BH structure
暂无分享,去创建一个
Shu Yamamoto | Hidenori Taga | Yuichi Matsushima | Masashi Usami | Hideaki Tanaka | Masatoshi Suzuki | M. Usami | Shu Yamamoto | H. Taga | Y. Matsushima | Hideaki Tanaka | Masatoshi Suzuki
[1] Shigeyuki Akiba,et al. Monolithic integration of InGaAsP/InP distributed feedback laser and electroabsorption modulator by vapor phase epitaxy , 1987 .
[2] S. Akiba,et al. Electrical and optical interactions between integrated InGaAsP/InP DFB lasers and electroabsorption modulators , 1988 .
[3] G. Eisenstein,et al. 4-Gb/s transmission experiment over 117 km of optical fiber using a Ti:LiNbO3external modulator , 1985, Journal of Lightwave Technology.
[4] S. Akiba,et al. Dynamic spectral width of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation , 1986 .
[5] S. Akiba,et al. Asymmetric λ/4-shifted InGaAsP/InP DFB lasers , 1987 .
[6] Yuichi Matsushima,et al. Λ/4-shifted InGaAsP/InP DFB lasers by simultaneous holographic exposure of positive and negative photoresists , 1984 .
[7] H. Ishikawa,et al. High-speed GaInAsP/InP buried-heterostructure optical intensity modulator with semi-insulating InP burying layers , 1987 .
[8] Hiroshi Ishikawa,et al. 5 Gb/s transmission experiment using a monolithic electro-absorption modulator/DFB laser light source , 1989 .
[9] Sadao Fujita,et al. 10 Gbit/s, 100 km optical fibre transmission experiment using high-speed MQW DFB-LD and back-illuminated GaInAs APD , 1989 .
[10] S. Sugou,et al. Epitaxial growth of highly Fe-doped semi-insulating InP layers by N2 carrier gas mixed hydride vapor phase epitaxy , 1989 .
[11] Uziel Koren,et al. Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator , 1987 .
[12] T. Wood. Multiple quantum well (MQW) waveguide modulators , 1988 .
[13] R. Alferness. Waveguide Electrooptic Modulators , 1982 .
[14] I. Yokota,et al. Evaluation of 4-Gbit/s optical fiber transmission distance with direct and external modulation , 1988 .
[15] Y. Yoshikuni,et al. High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells , 1985 .
[16] N. Edagawa,et al. 2.4 Gbit/s 100 km penalty-free conventional fibre transmission experiments using GaInAsP electroabsorption modulator , 1989 .
[17] Shigeyuki Akiba,et al. High-speed electroabsorption modulator with strip-loaded InGaAsP planar waveguide , 1986, Topical Meeting on Integrated and Guided-Wave Optics.
[18] Y. Yoshikuni,et al. Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators , 1986 .
[19] Steven K. Korotky,et al. 4Gb/s Transmission Experiment over 117km of Optical Fiber Using a Ti:LiNbO3 External Modulator , 1985 .
[20] S. Akiba,et al. Effect of hole pile-up at heterointerface on modulation voltage in GaInAsP electroabsorption modulators , 1989 .
[21] S. Akiba,et al. High-speed characteristics at high input optical power of GaInAsP electroabsorption modulators , 1988 .
[22] K. Kasahara,et al. Semi‐insulating current blocking property simulations for buried heterostructure laser diodes , 1988 .