Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale
暂无分享,去创建一个
A. Paccagnella | A. Visconti | J. Barak | R. Harboe-Sørensen | G. Cellere | M. Bonanomi | A. Akkerman | A. Virtanen | M. Murat
[1] J. Barak,et al. Electron and Ion Tracks in Silicon: Spatial and Temporal Evolution , 2008, IEEE Transactions on Nuclear Science.
[2] peixiong zhao,et al. Atomic Displacement Effects in Single-Event Gate Rupture , 2008, IEEE Transactions on Nuclear Science.
[3] R. Harboe-Sorensen,et al. Key Contributions to the Cross Section of NAND Flash Memories Irradiated With Heavy Ions , 2008, IEEE Transactions on Nuclear Science.
[4] P. Roche,et al. Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs , 2008, IEEE Transactions on Nuclear Science.
[5] M. Beuve,et al. Sensitivity of ion-induced sputtering to the radial distribution of energy transfers : A molecular dynamics study , 2008 .
[6] M. N. Mazziotta,et al. Electron–hole pair creation energy and Fano factor temperature dependence in silicon , 2008 .
[7] J. Barak,et al. Ion Track Structure and Dynamics in SiO $_{2}$ , 2007, IEEE Transactions on Nuclear Science.
[8] R. Harboe-Sorensen,et al. Angular Dependence of Heavy Ion Effects in Floating Gate Memory Arrays , 2007, IEEE Transactions on Nuclear Science.
[9] S. Gerardin,et al. Effectiveness of TMR-based techniques to mitigate alpha-induced SEU accumulation in commercial SRAM-based FPGAs , 2007, 2007 9th European Conference on Radiation and Its Effects on Components and Systems.
[10] W. J. Weber,et al. Monte Carlo method for simulating γ-ray interaction with materials: A case study on Si , 2007 .
[11] B. G. Lowe,et al. A measurement of the electron–hole pair creation energy and the Fano factor in silicon for 5.9 keV X-rays and their temperature dependence in the range 80–270 K , 2007 .
[12] A. Visconti,et al. Variability in FG Memories Performance After Irradiation , 2006, IEEE Transactions on Nuclear Science.
[13] C.K. Kouba,et al. Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors , 2006, IEEE Transactions on Nuclear Science.
[14] Alessandro Paccagnella,et al. Subpicosecond conduction through thin SiO2 layers triggered by heavy ions , 2006 .
[15] O. Flament,et al. Monte-Carlo simulations of ion track in silicon and influence of its spatial distribution on single event effects , 2006 .
[16] P.E. Dodd,et al. Physics-based simulation of single-event effects , 2005, IEEE Transactions on Device and Materials Reliability.
[17] J. Barak,et al. Straggling and extreme cases in the energy deposition by ions in submicron silicon volumes , 2005, IEEE Transactions on Nuclear Science.
[18] A. Visconti,et al. Radiation induced leakage current in floating gate memory cells , 2005, IEEE Transactions on Nuclear Science.
[19] A. Candelori,et al. Effect of different total ionizing dose sources on charge loss from programmed floating gate cells , 2005, IEEE Transactions on Nuclear Science.
[20] J. Barak,et al. Charge Yield and Related Phenomena Induced by Ionizing Radiation in SiO2 Layers , 2005, 2005 8th European Conference on Radiation and Its Effects on Components and Systems.
[21] Dimitris Emfietzoglou,et al. Ion and electron track-structure and its effects in silicon: model and calculations , 2005 .
[22] A. Visconti,et al. A model for TID effects on floating Gate Memory cells , 2004, IEEE Transactions on Nuclear Science.
[23] J. Barak,et al. Spatial distribution of electron-hole pairs induced by electrons and protons in SiO/sub 2/ , 2004, IEEE Transactions on Nuclear Science.
[24] K. Czerski,et al. Femtosecond dynamics – snapshots of the early ion-track evolution , 2004 .
[25] Alessandro Paccagnella,et al. Ionizing radiation effects on floating gates , 2004 .
[26] A. Candelori,et al. Data retention after heavy ion exposure of floating gate memories: analysis and simulation , 2003 .
[27] T. Oldham,et al. Total ionizing dose effects in MOS oxides and devices , 2003 .
[28] J. Barak,et al. Ion-track structure and its effects in small size volumes of silicon , 2002 .
[29] H. Rothard,et al. Monte Carlo simulation of electron emission induced by swift highly charged ions: beyond the linear response approximation , 2002 .
[30] Farokh Irom,et al. Single-event transients in high-speed comparators , 2002 .
[31] R. E. Johnson,et al. Coulomb explosion and thermal spikes. , 2001, Physical review letters.
[32] Ronald D. Schrimpf,et al. Proton-induced defect generation at the Si-SiO/sub 2/ interface , 2001 .
[33] Alessandro Paccagnella,et al. Radiation effects on floating-gate memory cells , 2001 .
[34] Sumio Matsuda,et al. Analysis of single-ion multiple-bit upset in high-density DRAMs , 2000 .
[35] Allan H. Johnston,et al. Radiation effects on advanced flash memories , 1999 .
[36] Carla Golla,et al. Flash Memories , 1999 .
[37] G. L. Hash,et al. Impact of ion energy on single-event upset , 1998 .
[38] Larry D. Edmonds,et al. Electric currents through ion tracks in silicon devices , 1998 .
[39] Piero Olivo,et al. Flash memory cells-an overview , 1997, Proc. IEEE.
[40] G. C. Messenger,et al. Single Event Phenomena , 1997 .
[41] Robert Ecoffet,et al. SEE results using high energy ions , 1995 .
[42] B. Gervais,et al. Simulation of the primary stage of the interaction of swift heavy ions with condensed matter , 1994 .
[43] M. Hervieu,et al. Swift, Heavy Ions in Insulating and Conducting Oxides: Tracks and Physical Properties , 1994 .
[44] Meftah,et al. Track formation in SiO2 quartz and the thermal-spike mechanism. , 1994, Physical review. B, Condensed matter.
[45] O. Fageeha,et al. Distribution of radial energy deposition around the track of energetic charged particles in silicon , 1994 .
[46] R. Averback,et al. Effect of viscous flow on ion damage near solid surfaces. , 1994, Physical review letters.
[47] L. D. Edmonds,et al. A simple estimate of funneling-assisted charge collection , 1991 .
[48] A. Akkerman,et al. Radial Energy Transfer Density Distribution around the Fast Ion Tracks in Silicon and Germanium , 1990 .
[49] T. A. Dellin,et al. Radiation response of floating gate EEPROM memory cells , 1989 .
[50] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .
[51] A. B. Campbell,et al. Charge collection in silicon for ions of different energy but same linear energy transfer (LET) , 1988 .
[52] H. E. Boesch,et al. Reversibility of trapped hole annealing , 1988 .
[53] N. Ghoniem,et al. Monte Carlo Simulation of Coupled Ion‐Electron Transport in Semiconductors , 1987 .
[54] P. S. Winokur,et al. The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices , 1987, IEEE Transactions on Nuclear Science.
[55] H. E. Boesch,et al. The Relationship between 60Co and 10-keV X-Ray Damage in MOS Devices , 1986, IEEE Transactions on Nuclear Science.
[56] A. B. Campbell,et al. Charge Transport by the Ion Shunt Effect , 1986, IEEE Transactions on Nuclear Science.
[57] Robert Katz,et al. The radial distribution of dose around the path of a heavy ion in liquid water , 1986 .
[58] T. R. Oldham,et al. Recombination along the tracks of heavy charged particles in SiO2 films , 1985 .
[59] Werner Brandt,et al. Effective stopping-power charges of swift ions in condensed matter , 1982 .
[60] W. Lanford,et al. Stopping power and effective charge of heavy ions in solids , 1982 .
[61] Ellen J. Yoffa,et al. Dynamics of dense laser-induced plasmas , 1980 .
[62] James E. Turner,et al. Heavy-Ion Track Structure in Silicon , 1979, IEEE Transactions on Nuclear Science.
[63] F. B. McLean,et al. Electron-hole pair-creation energy in SiO2 , 1975 .
[64] B. L. Gregory,et al. Latch-Up in CMOS Integrated Circuits , 1973 .
[65] R. Katz,et al. Particle Tracks in Emulsion , 1969 .
[66] Robert Katz,et al. Energy Deposition by Electron Beams and δ Rays , 1968 .
[67] P. B. Price,et al. Ion Explosion Spike Mechanism for Formation of Charged-Particle Tracks in Solids , 1965 .
[68] Herman Yagoda,et al. Nuclear Research Emulsions , 1964 .
[69] H. Bradt,et al. Investigation of the Primary Cosmic Radiation with Nuclear Photographic Emulsions , 1948 .
[70] E. Teller,et al. On the Energy Loss of Heavy Ions , 1941 .
[71] H. Bethe. Zur Theorie des Durchgangs schneller Korpuskularstrahlen durch Materie , 1930 .
[72] N. Mott. The Scattering of Fast Electrons by Atomic Nuclei , 1929 .