论文信息 - A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs

A new approach for modeling of current degradation in hot-electron damaged LDD NMOSFETs

An analytical model describing current degradation in hot-electron damaged LDD NMOSFETS is proposed. The basic idea of the model is that the drain current degradation can be explained in terms of an increase in the parasitic resistance only. Good agreement with measured data over at least three decades of stress time is obtained with our model. >

Tor A. Fjeldly | Trond Ytterdal | Kwyro Lee | S.-H. Kim

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