论文信息 - Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States - 字舞流文

Effect of NO Annealing on 6H- and 4H-SiC MOS Interface States

S. Dhar | L. Feldman | J. Rozen | P. Mooney | John R. Williams | A. Basile | X.D. Chen