Predictive Simulation of AlGaN/GaN HEMTs

For the development of next-generation AlGaN/GaN based high electron mobility transistors (HEMTs) in industry, reliable software tools for DC and AC simulation are required. Our device simulator Minimos-NT was calibrated against experimental data for this purpose. Subsequently, AC and DC simulations for both scaled devices from the same generation and new generation HEMTs were performed. A good accuracy for all relevant characteristics in comparison to measurement results is achieved.

[1]  Y.-F. Wu,et al.  High Al-content AlGaN/GaN MODFETs for ultrahigh performance , 1998, IEEE Electron Device Letters.

[2]  R. Dimitrov,et al.  Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures , 2000 .

[3]  R. Quay,et al.  Field-Plate Optimization of AlGaN/GaN HEMTs , 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.

[4]  A. Gossard,et al.  Electron Transport in III–V Nitride Two‐Dimensional Electron Gases , 2001 .

[5]  James S. Speck,et al.  POLARIZATION-INDUCED CHARGE AND ELECTRON MOBILITY IN ALGAN/GAN HETEROSTRUCTURES GROWN BY PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY , 1999 .

[6]  B. Jogai,et al.  Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors , 2003 .

[7]  Siegfried Selberherr,et al.  Hydrodynamic Modeling of AlGaN/GaN HEMTs , 2007 .

[8]  P. Parikh,et al.  40-W/mm Double Field-plated GaN HEMTs , 2006, 2006 64th Device Research Conference.

[9]  W. Hansch,et al.  The Hot-Electron Problem in Submicron MOSFET , 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

[10]  S. Selberherr,et al.  Industrial application of heterostructure device simulation , 2000, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084).

[11]  Rudiger Quay,et al.  Analysis and Simulation of Heterostructure Devices , 2004 .

[12]  S. Selberherr,et al.  IDENTIFICATION OF TRANSPORT PARAMETERS FOR GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICES , 2006 .