Transition metal co-precipitation mechanisms in silicon

[1]  M. Pickett,et al.  Transition metal interaction and Ni-Fe-Cu-Si phases in silicon , 2007 .

[2]  I D Sharp,et al.  Large melting-point hysteresis of Ge nanocrystals embedded in SiO2. , 2006, Physical review letters.

[3]  Michael Seibt,et al.  Gettering in silicon photovoltaics: current state and future perspectives , 2006 .

[4]  M. Pickett,et al.  Complex intermetallic phase in multicrystalline silicon doped with transition metals , 2006 .

[5]  M. Pickett,et al.  Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon , 2005 .

[6]  D. Macdonald,et al.  Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers , 2005 .

[7]  B. Lai,et al.  Impact of metal silicide precipitate dissolution during rapid thermal processing of multicrystalline silicon solar cells , 2005 .

[8]  B. Lai,et al.  Engineering metal-impurity nanodefects for low-cost solar cells , 2005, Nature materials.

[9]  Matthew D. Pickett,et al.  Chemical natures and distributions of metal impurities in multicrystalline silicon materials , 2005 .

[10]  Eicke R. Weber,et al.  Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells , 2005 .

[11]  B. Lai,et al.  Analysis of copper-rich precipitates in silicon: chemical state, gettering, and impact on multicrystalline silicon solar cell material , 2005 .

[12]  D. Macdonald,et al.  Transition-metal profiles in a multicrystalline silicon ingot , 2005 .

[13]  T. Radetić,et al.  Observations of interface premelting at grain-boundary precipitates of Pb in Al , 2004 .

[14]  A. Inoue,et al.  Formation of New Ti-based Metallic Glassy Alloys , 2004 .

[15]  Richard Celestre,et al.  Beamline 10.3.2 at ALS: a hard X-ray microprobe for environmental and materials sciences. , 2004, Journal of synchrotron radiation.

[16]  Electrical Properties of Iron-Doped Silicon at Different Stages of Precipitation , 2004 .

[17]  J. Kalejs,et al.  Metal Content of Multicrystalline Silicon for Solar Cells and its Impact on Minority Carrier Diffusion Length , 2003 .

[18]  T. Wang,et al.  Silicon defect and impurity studies using float-zone crystal growth as a tool , 2002 .

[19]  S. Myers,et al.  Copper gettering by aluminum precipitates in aluminum-implanted silicon , 2001 .

[20]  E. Stern,et al.  XAFS at the Pacific Northwest Consortium-Collaborative Access Team undulator beamline. , 2001, Journal of synchrotron radiation.

[21]  A. Istratov,et al.  Iron contamination in silicon technology , 2000 .

[22]  Michael Seibt,et al.  Mechanisms of transition-metal gettering in silicon , 2000 .

[23]  J. Kusinski,et al.  Laser cladding and erosive wear of Co–Mo–Cr–Si coatings , 2000 .

[24]  R. Celestre,et al.  Synchrotron-based impurity mapping , 2000 .

[25]  J. Justo,et al.  Electronic properties of copper-3d transition-metal pairs in silicon , 1999 .

[26]  Eicke R. Weber,et al.  Iron and its complexes in silicon , 1999 .

[27]  B. Lai,et al.  Nanometer focusing of hard x rays by phase zone plates , 1999 .

[28]  W. Schröter,et al.  STRUCTURAL AND ELECTRICAL PROPERTIES OF METAL SILICIDE PRECIPITATES IN SILICON , 1999 .

[29]  W. Schröter,et al.  Formation and Properties of Copper Silicide Precipitates in Silicon , 1998 .

[30]  J. Bolton,et al.  Silicide Phase Formation and Its Influence on Liquid Phase Sintering in 316L Stainless Steel with Elemental Silicon Additions , 1998 .

[31]  S. McHugo,et al.  Release of metal impurities from structural defects in polycrystalline silicon , 1997 .

[32]  S. Martinuzzi External self-gettering of nickel in float zone silicon wafers , 1997 .

[33]  N. Kobelev,et al.  Internal Friction and Elastic Properties of Nanocrystalline Fe-Si-Nb-Cu Alloy , 1996 .

[34]  Karen Maex,et al.  Properties of metal silicides , 1995 .

[35]  C. Szeles,et al.  Defect Recovery in DC-Cast and Hot-Rolled AlMn(FeSiCu) Alloys , 1992 .

[36]  R. Czaputa Transition metal impurities in silicon: New defect reactions , 1989 .

[37]  R. Drosd,et al.  Analysis of plate and colony precipitates decorating stacking faults in a single‐crystal silicon , 1988 .

[38]  D. Mikkola,et al.  Effects of alloying additions of titanium, molybdenum, silicon, hafnium and tantalum on the microstructure of iron aluminides near Fe3Al , 1987 .

[39]  H. Sitter,et al.  Experimental identification of the energy level of substitutional manganese in silicon , 1987 .

[40]  Eicke R. Weber,et al.  Transition metals in silicon , 1983 .

[41]  J. K. Solberg The crystal structure of η-Cu3Si precipitates in silicon , 1978 .

[42]  E. Nes The mechanism of repeated precipitation on dislocations , 1973 .

[43]  G. Lunde,et al.  Copper Precipitate Colonies in Silicon , 1972 .

[44]  W. Shockley,et al.  Metal Precipitates in Silicon p‐n Junctions , 1960 .

[45]  G. Bemski Quenched-In Recombination Centers in Silicon , 1956 .