An ultra wideband 5 W power amplifier using SiC MESFETs

A 5 watt widehand power amplifier using a Sic MESFET has been designed. The frequency range covers 10 MHz to 2.4 CHz with small-signal gain of 8 dB.A broadband choke structure with a new technique was developed to obtain good isolation and low loss over the desired bandwidth. Input and output matching networks and shunt feedback topology were introduced to increase the bandwidth. At VDS = 30 V and IDS = 500 mA, power performance measurements with PAE of almost 3% an output power of 231 dBm and 8 dB power gain over the operating bandwidth were achieved. livo-tone measurements at frequency spacing of200 kHz were also done and OIPZ and OlP3 of 16 dBm and 49 dBm, respectively, were obtained. Finally, AMAM and AMlPM distortions were measured and the results are discussed.

[1]  J. Palmour,et al.  Applications of SiC MESFETs and GaN HEMTs in power amplifier design , 2002, 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278).

[2]  J.C.M. Hwang.  Wide-bandgap-semiconductor wide-bandwidth wide-temperature-range power amplifiers , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

[3]  Farid Temcamani,et al.  Power amplification with silicon carbide MESFET , 1999 .

[4]  Mark A Beach,et al.  A high performance ultra-broadband RF choke for microwave applications , 1995 .

[5]  J.W. Palmour,et al.  Progress in high power SiC microwave MESFETs , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[6]  C. Brylinski,et al.  Silicon carbide MESFETs performances and application in broadcast power amplifiers , 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).