Inkjet printed copper source/drain metallization for amorphous silicon thin-film transistors
暂无分享,去创建一个
[1] Sigurd Wagner,et al. Novel processing technology for microelectronics , 2000 .
[2] A. Yassar,et al. All-Polymer Field-Effect Transistor Realized by Printing Techniques , 1994, Science.
[3] John A. Rogers,et al. Printable organic and polymeric semiconducting materials and devices , 1999 .
[4] Chung-Chih Wu,et al. Ink-jet printing of doped polymers for organic light emitting devices , 1998 .
[5] Webster E. Howard,et al. Limitations and prospects of a‐Si:H TFTs , 1995 .
[6] Sigurd Wagner,et al. Photoresist-free fabrication process for a-Si:H thin film transistors , 1998 .
[7] S. Das,et al. A high performance 1.8 V, 0.20 /spl mu/m CMOS technology with copper metallization , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[8] H. Sirringhaus,et al. Self-passivated copper gates for amorphous silicon thin-film transistors , 1997, IEEE Electron Device Letters.
[9] P. Roper,et al. Full copper wiring in a sub-0.25 /spl mu/m CMOS ULSI technology , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[10] D. P. Graddon. The absorption spectra of complex salts—IV cupric alkanoates , 1961 .
[11] Ross H. Hill,et al. SOLID STATE PHOTOCHEMISTRY OF CU2(OH2)2(O2C(CH2)4CH3)4 IN THIN FILMS : THEPHOTOCHEMICAL FORMATION OF HIGH-QUALITY FILMS OF COPPER AND COPPER(I) OXIDE . DEMONSTRATION OF A NOVEL LITHOGRAPHIC TECHNIQUE FOR THE PATTERNING OF COP PER , 1996 .
[12] S. Wagner,et al. Electrographically patterned thin-film silicon transistors , 1996, IEEE Electron Device Letters.
[13] S. Wagner,et al. Direct writing and lift-off patterning of copper lines at 200ºC maximum process temperature , 1997 .
[14] Kazuyuki Nakamura,et al. A new patterning process concept for large-area transistor circuit fabrication without using an optical mask aligner , 1994 .