Low‐loss GaInAsP buried‐heterostructure optical waveguide branches and bends
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Low‐loss GaInAsP buried‐heterostructure waveguide branches and bends have been demonstrated using a novel etch and liquid phase epitaxial regrowth technique. Branching losses as low as 0.4 dB at 1.3‐μm wavelength for a 1° branch have been achieved. The measured waveguide propagation loss is ≤1.5 cm−1.
[1] F. K. Reinhart,et al. Electro‐optical light modulation in InGaAsP/InP double heterostructure diodes , 1983 .
[2] A. Syrbu,et al. Single-mode InGaAsP/InP buried waveguide structures grown on channelled {111}B InP substrates , 1982 .
[3] James N. Walpole,et al. A novel technique for GaInAsP/InP buried heterostructure laser fabrication , 1982 .