论文信息 - Stability and switching in overcritically doped Gunn diodes

Stability and switching in overcritically doped Gunn diodes

It is shown theoretically that Gunn diodes with arbitrarily high nL products arestable under constant voltage condition if the doping is sufficiently high, the doping fluctuations do not exceed a critical value of about 10 percent, and the high field branch of the V/E characteristic is not rising steepty. The device can be used as a sub-nanosecond switching element.

H. Thim | H. Thim

[1] H. Kroemer. Nonlinear space-charge domain dynamics in a semiconductor with negative differential mobility , 1966 .

[2] H. L. Grubin,et al. The influence of boundary conditions on current instabilities in GaAs , 1969 .

[3] Herbert Kroemer,et al. Theory of the Gunn effect , 1964 .

[4] K. W. Böer,et al. Influence of Boundary Conditions on High-Field Domains in Gunn Diodes , 1969 .

[5] H. Thim,et al. CARRIER GENERATION AND SWITCHING PHENOMENA IN n—GaAs DEVICES , 1967 .

[6] E. Conwell. Boundary conditions and high-field domains in GaAs , 1970 .

[7] A. G. Chynoweth,et al. Theory of negative-conductance amplification and of Gunn instabilities in "two-valley" semiconductors , 1966 .