Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Single crystalline Nd2O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100°C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17×1011eV−1cm−2 and 3.75×1012cm−2, respectively. The interface trap density is then further confirmed by the conductance method.

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