Atomic and electronic structure of the nonpolar GaN ( 1 1 ¯ 00 ) surface

We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and ab initio density-functional theory simulations study of the cleaved nonpolar $(1\overline{1}00)$ surface ($m$-plane) of $n$-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces (defect concentration ${\ensuremath{\sigma}}_{d}\ensuremath{\le}2\ifmmode\times\else\texttimes\fi{}{10}^{12}\text{ }{\text{cm}}^{\ensuremath{-}2}$) show that the Fermi energy is not pinned and the tunneling current flows through Ga-like electronic states lying outside the fundamental band gap. On surface areas with defect concentration ${\ensuremath{\sigma}}_{d}\ensuremath{\ge}3\ifmmode\times\else\texttimes\fi{}{10}^{13}\text{ }{\text{cm}}^{\ensuremath{-}2}$, the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place.