论文信息 - Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies

Equivalent circuit of the Schottky-Barrier field-effect transistor at microwave frequencies

Johnson's high-frequency representation theory for MOSFET's, experimentally confirmed by Hopkins up to 1 GHz, is extended in this short paper for SBFET's and is found to substantially agree with data for 1-mu m- and 1/2-mu m-gate GaAs SBFET's up to 12 GHz. Regenerative-feedback conductance not accounted for by conventional models is seen to be present in SBFET's at microwave frequencies.

R. Dawson | R. H. Dawson

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