Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
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G. Bersuker | M. Gardner | P. Zeitzoff | B.H. Lee | P. Majhi | K. Matthews | S.C. Song | R. Choi | H.C. Wen | G.A. Brown | C. Huffman | J.H. Sim | N. Moumen | G. Bersuker | K. Matthews | J. Peterson | R. Choi | C. Kang | P. Majhi | P. Lysaght | C. Young | B. Lee | N. Moumen | H. Huff | J. Barnett | H. Alshareef | S. Song | S. Gopalan | C. Huffman | H. Wen | P. Zeitzoff | C. Ramiller | K. Choi | M. Gardner | R. Murto | G.A. Brown | H. Li | C.Y. Kang | J. Barnett | J. Gutt | J. Peterson | C.D. Young | P. Lysaght | R. Harris | H. Alshareef | R. Harris | S. Gopalan | L. Larson | J. Gutt | J. Sim | P. Kirsh | L. Larson | K.S. Choi | P. Kirsh | H.-J. Li | H.R. Huff | R.W. Murto | C. Ramiller
[1] S. De Gendt,et al. A study of relaxation current in high-/spl kappa/ dielectric stacks , 2004, IEEE Transactions on Electron Devices.
[2] Evgeni P. Gusev,et al. Charge detrapping in HfO2 high-κ gate dielectric stacks , 2003 .
[3] Massimo V. Fischetti,et al. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks , 2003 .
[4] L. Pantisano,et al. Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics , 2003, IEEE Electron Device Letters.
[5] K.A. Jenkins,et al. Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating , 1995, IEEE Electron Device Letters.
[6] J. Kavalieros,et al. High-/spl kappa//metal-gate stack and its MOSFET characteristics , 2004, IEEE Electron Device Letters.
[7] Young Hee Kim,et al. Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs , 2003 .
[8] J. Jameson,et al. Double-well model of dielectric relaxation current , 2004 .
[9] Young-Gu Jin,et al. H-related defect complexes in HfO2: A model for positive fixed charge defects , 2004 .
[10] S. Zafar,et al. Evaluation of NBTI in HfO/sub 2/ gate-dielectric stacks with tungsten gates , 2004, IEEE Electron Device Letters.
[11] A. Abramo,et al. Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs , 2003 .
[12] E. Cartier,et al. Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering , 2001 .
[13] Tak H. Ning,et al. Hot-carrier charge trapping and trap generation in HfO2 and Al2O3 field-effect transistors , 2003 .
[14] T. Ma,et al. Mobility measurement and degradation mechanisms of MOSFETs made with ultrathin high-k dielectrics , 2004, IEEE Transactions on Electron Devices.