Real-time estimation of patterned wafer parameters using in situ spectroscopic ellipsometry

We analyze the problem of real-time thickness estimation for patterned wafers during an etching process using in situ spectroscopic ellipsometry. For that, a two-stage estimation algorithm is proposed. The first stage is an automatic model calibration algorithm that uses the data collected during an initial interval. The second stage is a nonlinear state estimation system designed for the tuned model. We study the sensitivity of this estimation strategy to variations in the wafer parameters and the process conditions.

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