The effect of tungsten on the properties of gold-doped silicon

The effect of the tungsten coating on the photoelectric and electrophysical properties of electron-silicon samples after gold diffusion was analyzed. The trap levels associated with tungsten atoms, with a tungsten complex + vacancy, and with an oxygen + vacancy complex were detected. In samples of silicon doped with gold, both with and without a tungsten coating, the resistivity increased by 2-3 orders of magnitude, which indicates the creation of additional energy centers associated with gold and gold complexes caused by tungsten. At the same time, the time of nonstationary relaxation photoconductivity has greatly decreased, which also indicates the creation of additional recombination centers and trap levels.