论文信息 - Model of thermoelectric radiation sensors made by CMOS and micromachining

Model of thermoelectric radiation sensors made by CMOS and micromachining

Abstract The feasibility of thermopile infrared detectors on CMOS silicon oxide cantilever beams isolated by post-processing anisotropic etching is assessed by an analytical model. The sensitivity and detectivity are calculated for a variety of device geometries. An optimal design with a predicted sensitivity of 20 V/W for a receiving area of 0.5 mm 2 is proposed.

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