论文信息 - Low Threshold Room Temperature Pulsed and -31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers - 字舞流文

Low Threshold Room Temperature Pulsed and -31 °C CW Operations of 1.3 µm GaInAsP/InP Buried Heterostructure Surface Emitting Lasers

Kenichi Iga | Fumio Koyama | Toshihiko Baba | F. Koyama | K. Iga | T. Baba | K. Suzuki | Yukiaki Yogo | K. Suzuki | Y. Yogo

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[4] Ikuo Mito,et al. InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement , 1983 .