论文信息 - HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

The technique of spectroscopic ellipsometry (SE) has been utilized to monitor in real-time and precisely control the surface temperature of Hg1−xCdxTe during molecular beam epitaxy. Due to the temperature dependence of the Hg sticking coefficient under Hg-deficient growth conditions, the near-surface composition of an epilayer is extremely sensitive to surface temperature. SE data were acquired in real time and modeled using a previously established library of dielectric functions of Hg1−xCdxTe as a function of composition. Utilizing SE-generated compositional profiles as a guide, substrate heating power was adjusted in such a way as to minimize composition transients. To demonstrate the effectiveness of the technique, we have used SE to control the temperature of HgCdTe epilayer surfaces during deposition on three-inch (211)CdZnTe/ZnTe/Si composite substrates mounted on indium free holders.

Nibir K. Dhar | John H. Dinan | L. A. Almeida | M. Martinka

[1] J. E. Jensen,et al. Integrated multi-sensor control of II–VI MBE for growth of complex IR detector structures , 1998 .

[2] D. B. Fenner,et al. Silicon surface passivation by hydrogen termination: A comparative study of preparation methods , 1989 .

[3] N. Dhar,et al. Heteroepitaxy of CdTe on {211}Si substrates by molecular beam epitaxy , 1996 .

[4] I. Bhat,et al. Application of spectroscopic ellipsometry for real-time control of CdTe and HgCdTe growth in an OMCVD system , 1995 .

[5] John A. Woollam,et al. In-situ spectroscopic ellipsometry of HgCdTe , 1996 .

[6] J. D. Benson,et al. Automated compositional control of Hg1−xCdxTe during MBE, using in situ spectroscopic ellipsometry , 1998 .

[7] G. H. Westphal,et al. In situ sensors for monitoring and control in molecular beam epitaxial growth of Hg1−xCdxTe , 1996 .