Growth of High AI Content AIGaN Epilayer by MOCVD

High AI content A1GaN films are grown on sapphire substrate by metalorganie chemical vapor deposition (MOCVD) using AIN/AIGaN superlattices.Transmission measurements combined with double·crystal X-ray diffraction (DCXRD) And scanning electron microscopy (SEM) are used to characterize the AIGaN epilayers.The optical properties， crystal quality and surface morphology of A1GaN epilayers deposited at 1.33×10^4 and 0.66 X 10^4 Pa are also compared.