Characterization of Surface States in MOS Capacitors by a Modified DLTS Technique

A modified DLTS technique for characterization of surface states in MOS structure is proposed. It involves scanning the bias while applying small filling pulses at constant temperature. The surface states behave as discrete levels when the pulses are small. Results on a CuSiO2pSi tunnel diode are presented as example. Eine modifizierte DLTS-Technik zur Charakterisierung der Oberflachenzustande in MOS-Strukturen wird vorgeschlagen, die in einer Anderung (scanning) der Vorspannung besteht, wahrend kleine Fullimpulse bei konstanter Temperatur angelegt werden. Die Oberflachenzustande zeigen sich als diskrete Niveaus, wenn die Impulse klein sind. Als Beispiel werden die Ergebnisse an einer CuSiO2–p-Si-Tunneldiode mitgeteilt.

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