Study of Temperature Characteristic of GaAs MESFET Forward Schottky Junction

Abstract We measured. and analysed the variation of forward Schottky junction voltage with temperature and found that the temperature coefficient α= dVgsf/dT depends on the testing current. The |α| rises with the testing current I. Through regression with the experiment value, we found that the relation between a and I meets the power function, and also found that the forward variation of voltage Vgsf with temperature has the focus feature in different testing current, e.g. T= OK, all the Vgsf in dfferent current approach the same value. From this characteristic, we give the new relation formula of forward Sckottky juncution I-V. It includes the real factor influence, explains the focus feature well.