Low frequency noise of InGaP/GaAs HBT at high injection: A comprehensive analysis of base-collector, base-emitter junctions and base layer TLM

Low frequency (LF) noise and especially trap assisted GR noise in semiconductor devices does not affect only the performances of radio frequency (RF) and microwave transmitters (oscillators) but also that of receivers (local oscillators, mixers). Measurement and simulation characterization tools of semiconductor devices become crucial in order to optimize their characteristics and circuit performances. In this paper, firstly we propose a low noise, wideband LF noise setup which allows to measure noise sources up to 10 MHz. Secondly, by using TCAD simulation tools of semiconductor devices, the origin of LF noise sources in InGaP/GaAs HBT is investigated. Many comparisons between numerical physics-based device noise simulation and LF noise measurement of base TLM, varactor base-collector junction and base-emitter heterojunction allow us to locate precisely the origin of LF noise of InGaP/GaAs HBT.

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