Transformations of C-type defects on Si(100)-2 × 1 surface at room temperature STM/STS study

[1]  William J. Kaiser,et al.  Scanning Tunneling Microscopy , 2019, CIRP Encyclopedia of Production Engineering.

[2]  P. Kocán,et al.  Defects on the Si ( 100 ) − ( 2 × 1 ) surface: Anchoring sites of the surface polymerization reaction of In atoms , 2008 .

[3]  P. Kocán,et al.  Stability of In rows on Si(1 0 0) during STM observation , 2007 .

[4]  P. Kocán,et al.  Comment on “Monotonically decreasing size distributions for one-dimensional Ga rows on Si(100)” , 2006 .

[5]  B. Voigtländer,et al.  Structure of the adatom electron band of the Si(III)-7 x 7 surface , 2006 .

[6]  A. Oshiyama,et al.  A new alternative model of type-C defects on Si(1 0 0) surfaces , 2004 .

[7]  S. R. Schofield,et al.  Split-off dimer defects on the Si(001)2×1 surface , 2003, cond-mat/0305065.

[8]  M. Hossain,et al.  Model for C defect on Si(100): The dissociative adsorption of a single water molecule on two adjacent dimers , 2003 .

[9]  K. Rieder,et al.  Buckling and band gap of the Ge ( 111 ) 2 × 1 surface studied by low-temperature scanning tunneling microscopy , 2001 .

[10]  K. Hata,et al.  Electronic structure of the C defects of Si(001) measured by scanning tunneling spectroscope at room and low temperature (80 K) , 2000 .

[11]  K. Hata,et al.  Metastable and excited states of the C defects of Si(001) , 1999 .

[12]  J. Yates,et al.  Electronic characterization of defect sites on Si(001)-(2 × 1) by STM , 1997 .

[13]  Z. Zhang,et al.  New features of C-type defects on the Si(100) surface observed by scanning tunnelling microscopy , 1996 .

[14]  Selloni,et al.  Binding and diffusion of hydroxyl radicals on Si(100): A first-principles study. , 1995, Physical review. B, Condensed matter.

[15]  Iwatsuki,et al.  Low-temperature scanning-tunneling-microscopy observations of the Si(001) surface with a low surface-defect density. , 1994, Physical review. B, Condensed matter.

[16]  P. Avouris,et al.  STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection , 1992 .

[17]  R. Hamers,et al.  Determination of the local electronic structure of atomic‐sized defects on Si(001) by tunneling spectroscopy , 1989 .