论文信息 - Inverse C–V profiling technique for heterostructure semiconductor devices taking account of two-dimensional quantization effect - 字舞流文

Inverse C–V profiling technique for heterostructure semiconductor devices taking account of two-dimensional quantization effect

M. Ogawa | T. Miyoshi | N. Kikuchi

[1] M. Ogawa,et al. Accurate parameter extraction of heterojunctions based on inverse C-V simulation , 1995 .

[2] M. Schmeits,et al. Capacitance of abrupt heterojunctions with inversion layers , 1995 .

[3] Herbert Kroemer,et al. Band offsets at heterointerfaces: Theoretical basis, and review of recent experimental work , 1986 .

[4] H. Kroemer,et al. The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C-V profiling through isotype heterojunctions , 1985 .

[5] H. Kroemer. Determination of heterojunction band offsets by capacitance‐voltage profiling through nonabrupt isotype heterojunctions , 1985 .

[6] F. Serra-Mestres,et al. A generalized approximation of the Fermi–Dirac integrals , 1983 .

[7] T. Ando. Self-Consistent Results for a GaAs/AlxGa1-xAs Heterojunciton. II. Low Temperature Mobility , 1982 .

[8] M. Lundstrom,et al. Modeling semiconductor heterojunctions in equilibrium , 1982 .

[9] James S. Harris,et al. Measurement of isotype heterojunction barriers by C‐V profiling , 1980 .

[10] A. H. Marshak,et al. Electrical current in solids with position-dependent band structure , 1978 .