论文信息 - Crystallographic Analysis of (110)CeO 2 /(100)Si Using RBS/Channeling Technique - 字舞流文

Crystallographic Analysis of (110)CeO 2 /(100)Si Using RBS/Channeling Technique

T. Ohsuna | Tomoyasu Inoue | Yasuhiro Yamamoto | M. Satoh | Y. Sakurai | S. Nakajima

[1] T. Ohsuna,et al. Texture Structure Analysis and Crystalline Quality Improvement of CeO2(110) Layers Grown on Si(100) Substrates , 1992 .

[2] T. Ohsuna,et al. Growth of (110)‐oriented CeO2 layers on (100) silicon substrates , 1991 .

[3] S. Gonda,et al. Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh Vacuum , 1991 .

[4] A. Yamanaka,et al. Low‐temperature epitaxial growth of cerium dioxide layers on (111) silicon substrates , 1991 .

[5] H. Koinuma,et al. In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-Vacuum , 1990 .

[6] S. Suzuki,et al. Epitaxial growth of CeO2 layers on silicon , 1990 .

[7] Chadi Dj,et al. Stabilities of single-layer and bilayer steps on Si(001) surfaces. , 1987 .

[8] T. Ohsuna,et al. Orientation Dependent Epitaxial Growth of CeO 2 Layers on Si Substrates , 1991 .