论文信息 - Phase shifters using (Ba,Sr)TiO/sub 3/ thin films on sapphire and glass substrates

Phase shifters using (Ba,Sr)TiO/sub 3/ thin films on sapphire and glass substrates

In this paper, we present results from distributed phase shifter circuits that were fabricated on sapphire and glass substrates. The circuits employ voltage tunable (Ba,Sr)TiO/sub 3/ (BST) thin films deposited by rf magnetron sputtering. Both parallel-plate and interdigital capacitor structures are investigated. K/Ka-band phase shifters demonstrated a phase shift of 265/spl deg/ with an insertion loss of 5.8 dB at 20 GHz and 180/spl deg/ phase shift with an insertion loss of 4 dB at 30 GHz. Both circuits demonstrated a promising figure of merit /spl sim/60/spl deg//dB at 10 GHz. A C/X-band phase shifter demonstrated a phase shift of >460 degrees with an insertion loss of 8.8 dB at 8 GHz.

[1] James S. Speck,et al. Tunable strontium titanate thin films for microwave devices , 2001 .

[2] Robert A. York,et al. BaSrTiO/sub 3/ interdigitated capacitors for distributed phase shifter applications , 2000 .

[3] James S. Speck,et al. Monolithic Ka-band phase shifter using voltage tunable BaSrTiO/sub 3/ parallel plate capacitors , 2000 .

[4] Robert A. York,et al. Distributed analog phase shifters with low insertion loss , 1999 .

[5] Felix A. Miranda,et al. A KU-BAND GOLD/BAXSR1-XTIO3/LAALO3 CONDUCTOR/THIN-FILM FERROELECTRIC MICROSTRIP LINE PHASE SHIFTER FOR ROOM-TEMPERATURE COMMUNICATIONS APPLICATIONS , 1999 .

[6] C. Mueller,et al. (YBa2Cu3O7−δ,Au)/SrTiO3/LaAlO3 thin film conductor/ferroelectric coupled microstripline phase shifters for phased array applications , 1997 .

[7] N. Alexopoulos,et al. Planar microwave integrated phase-shifter design with high purity ferroelectric material , 1997 .

[8] Y. Umeda,et al. Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates , 1995 .

[9] K. A. Jose,et al. A novel microwave planar phase shifter , 1995 .