Ultraviolet and violet light‐emitting GaN diodes grown by low‐pressure metalorganic chemical vapor deposition

Both metal‐insulator‐semiconductor and p‐n junction electroluminescence have been observed in thin‐film, metalorganic chemical vapor deposition‐grown GaN diodes thermally annealed in N2. UV radiation, peaking near 380 nm, is emitted when electrons are injected from the undoped, n‐type material into the Mg‐doped, p‐type GaN. Violet light, peaking near 430 nm, is obtained by injecting electrons into p‐type material from either n‐type material or non‐ohmic metal contacts. The present results support and extend earlier interpretations of the nature of the recombination centers in GaN.