论文信息 - 930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template - 字舞流文

930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template

Paul R. Berger | E. Brown | R. Molnar | J. Daulton | Weidong Zhang | D. Meyer | D. Storm | T. A. Growden | E. M. Cornuelle | L. Whitaker | E. Cornuelle | E. Brown