A study of template cleaning for nano-imprint lithography

Nanoimprinting lithography (NIL) is being evaluated as a possible method for meeting lithography requirements for semiconductor imaging at 32nm half-pitch nodes and below. NIL is included in the International Technology Roadmap for Semiconductors (ITRS) as a potential choice for advanced lithography. In this technology, the template, or mold, is a critical component in achieving the requirements for feature size and defectivity. Since NIL is a contact imaging technique, one of the issues is the high probability of defects while imprinting. Since the template is in contact with a fluid during the imaging process, maintaining the required template cleanliness needed to met the ITRS requirements without damaging or changing critical dimensions is an important process. In this paper we discuss the results obtained from several different NIL template cleaning methods using SEMATECH's Mask Blank Development Center facilities. The effectiveness of different operating conditions as well as several different chemistries is compared.