Low-temperature growth of highly c-oriented InN films on glass substrates with ECR-PEMOCVD

[1]  F. Jia,et al.  Deposition and properties of highly C-oriented GaN films on diamond substrates , 2011 .

[2]  F. Lai,et al.  Metal-organic molecular beam epitaxy growth of InN films on highly orientated TCO/Si(1 0 0) substrates , 2008 .

[3]  S. Chang,et al.  MOCVD Growth of InN on Si(111) with Various Buffer Layers , 2008 .

[4]  Javier Grandal,et al.  InN layers grown on silicon substrates: effect of substrate temperature and buffer layers , 2005 .

[5]  Yiping Zeng,et al.  Growth and characterization of InN on sapphire substrate by RF-MBE , 2005 .

[6]  Qian Sun,et al.  Low-temperature growth of InN by MOCVD and its characterization , 2005 .

[7]  M. Kurouchi,et al.  Growth of high-quality InN films by insertion of high-temperature InN buffer layer , 2005 .

[8]  A. Suzuki,et al.  MBE‐growth, characterization and properties of InN and InGaN , 2003 .

[9]  Shui-Tong Lee,et al.  Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices , 2003 .

[10]  Akio Yamamoto,et al.  Indium nitride (InN): A review on growth, characterization, and properties , 2003 .

[11]  T. Matsui,et al.  Epitaxial growth of high-quality InN films on sapphire substrates by plasma-assisted molecular-beam epitaxy , 2003 .

[12]  Hiroshi Harima,et al.  Optical bandgap energy of wurtzite InN , 2002 .

[13]  A. Aberle,et al.  Investigation of lateral parameter variations of Al-doped zinc oxide films prepared on glass substrates by rf magnetron sputtering , 2002 .

[14]  Tadatsugu Minami,et al.  Transparent and conductive multicomponent oxide films prepared by magnetron sputtering , 1999 .

[15]  O. Takai,et al.  Optical and electrical properties of InN thin films grown on ZnO/α-Al2O3 by RF reactive magnetron sputtering , 1998 .

[16]  M. Chudzik,et al.  Charge transport, optical transparency, microstructure, and processing relationships in transparent conductive indium-zinc oxide films grown by low-pressure metal-organic chemical vapor deposition , 1998 .

[17]  K. Kim,et al.  The physical properties of Al-doped zinc oxide films prepared by RF magnetron sputtering , 1997 .

[18]  Tanakorn Osotchan,et al.  Electron mobilities in gallium, indium, and aluminum nitrides , 1994 .

[19]  Z. Dong,et al.  Preparation and Characteristics of GaN Films on Freestanding CVD Thick Diamond Films , 2010 .

[20]  J W Orton,et al.  Group III nitride semiconductors for short wavelength light-emitting devices , 1998 .